Room-temperature photoluminescence of erbium-doped amorphous hydrogenated silicon

摘要

Photoluminescence of erbium-doped hydrogenated amorphous silicon was observed and compared with that of crystalline erbium-doped silicon. It is shown that a-Si:H:Er exhibits efficient room-temperature photoluminescence at 1.537 urn which is as strong as the emission from optimized c-Si:Erat 2 K. Practically no temperature quenching of the emission intensity in the range 2 - 300 K is observed. Saturation of erbium luminescence on increase of excitation level occurs at higher intensities of pumping beam than in c-Si:Er indicating shorter radiation lifetime of erbium ions.