Optoelectronic Applications of Wide-Band Gap II-VI Semiconductors

摘要

A continued study to demonstrate the viability of growth of LED and laser diodestructures on ZnSe substrates as compared with heteroepitaxial growth of II-VI structures on GaAs substrates. Other key issues that were to be addressed included p-type doping of ZnSe using nitrogen plasma sources and the ohmic contact problem for p-type ZnSe. jg p1.