Ultrafast Phase Modulators and Semiconductor Laser Devices at 1.3 microns

摘要

A transmission up conversion system was built, which consisted of a tunable modelocked Ti: Sapphire laser and a tunable continuous wave Cr:Forsterite laser. The system has 100 femtosecond time resolution near 1/3micrometer wavelength, limited only by the mode locked Ti:Sapphire laser pulse width. With the transmission up conversion system, we observed 5 picosecond carrier capture time in GaInAlAs (11nm)/InAlAs multiple quantum wells (MQWs) at 77K. The continuous wave Cr:Forsterite laser was also used to measure the phase modulation by a current. The maximum 5 pi phase shift was observed through the 200micrometer long InGaAs/InAlAs MQW laser diode.