N-Type SiC Rectifying Junctions for High Power, High Temperature Electronics

摘要

A new metal demonstrated to form ideal rectifying Schottky diode junctions to n-type SiC, and further, not to limit the thermal and power density capability of SiC devices and circuits in any way The following properties were demonstrated between kT and 1050 C: (1) metal does not spall, peel or scratch, (2) metal/n-SiC junction remains abrupt, (3) I-V unchanged by thermal exposure, (4) barrier