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Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures

机译：在较高结温下操作的SIC电源装置中接触孔的电迁移可靠性

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Satoshi Tanimoto; Naoki Nishio; Tatsuhiro Suzuki; Yoshinori Murakami; Hiromichi Ohashi; Hiroshi Yamaguchi; Hajime Okumura;
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年度 2010
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1. Common Metal Die Attachment for SiC Power Devices Operated in an Extended Junction Temperature Range [J] . Satoshi Tanimoto, Kohei Matsui, Yusuke Zushi, Materials science forum . 2012,第PTa2期

机译：在扩展结温范围内工作的SiC功率器件的常见金属模具附件
2. Maximum Junction Temperatures of SiC Power Devices [J] . Sheng K. IEEE Transactions on Electron Devices . 2009,第2期

机译：SiC功率器件的最高结温
3. P-N junction and metal contact reliability of SiC diode in high temperature (873 K) environment [J] . R. Chand, M. Esashi, S. Tanaka Solid-State Electronics . 2014,第APRa期

机译：高温（873 K）环境下SiC二极管的P-N结和金属接触可靠性
4. Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures [C] . Satoshi Tanimoto, Naoki Nishio, Tatsuhiro Suzuki, Silicon carbide and related materials 2009 . 2010

机译：在较高结温下工作的SiC功率器件中接触孔的电迁移可靠性
5. Design and characterization of 6H-SiC devices for high-power and high-temperature applications. [D] . Ramungul, Nudjarin. 1998

机译：用于大功率和高温应用的6H-SiC器件的设计和表征。
6. High-Performance Temperature Sensors Based on Dual 4H-SiC JBS and SBD Devices [O] . Seong-Ji Min, Myeong Cheol Shin, Ngoc Thi Nguyen, 2020

机译：基于双4H-SiC JBS和SBD器件的高性能温度传感器
7. Common Metal Die Attachment for SiC Power Devices Operated in an Extended Junction Temperature Range [O] . Satoshi Tanimoto, Kohei Matsui, Yusuke Zushi, 2012

机译：用于在扩展结温范围内操作的SIC电源器件的常见金属模具附件

Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures

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