Wide Bandgap Transit Time Devices for Achieving High Frequency Operation

摘要

The proposed device described offers a simple method for achieving the generationof high frequency signals. More particularly, the device pertains to achieving high frequency signals using semiconductor materials having increased electron saturation velocity over those values for gallium arsenide (GaAs) and silicon (Si). The use of such materials, together with submicron scale and nano-scale device processing techniques, affords devices having frequencies up to and including the terahertz band with high temperature and radiation hard characteristics. Such devices include transit-time-based oscillators for use in military and civilian radar receivers, logic devices, burglar/proximity alarm systems, biological/chemical agent detectors and secure communications modules.