Influence of Precursor Route on the Photoluminescence of Bulk NanocrystallineGallium Nitride

摘要

In this communication, the impact of preparative methods on the photoluminescenceof nanophase GaN materials is reported. In general, the observed emission spectra are strongly dependent on the choice of precursor and the pyrolysis temperature used to convert it to GaN. The GaN derived from gallium imide, Ga(NH)3/2n, typically exhibits yellow defect photoluminescence, with the pyrolysis temperature influencing the intensity of the emission. Pyrolysis of this same precursor in relatively high boiling N, N, N', N'-tetramethyl-1, 6-hexanediamine yields blue photoluminescence with an emission maximum near 420 nm. In contrast, GaN derived from the pyrolysis of gallazane precursors, H2GaNH23 and a related polymeric solid, yields blue light emission whose quantum yield can be improved by a brief HF etch.