Electronic Properties of Semimetal- Semiconductor (V/III-V) Heterostructures andDevices

摘要

The project involved an experimental investigation of the synthesis and theelectrical transport properties of semimetal-semiconductor based heterostructures and devices. The structures consisted of elemental (Sb) semimetals in combination with antimonide based III-V semiconductors (GaSb). The investigation of these novel semimetal-semiconductor heterostructures was motivated by their unique electronic properties and potential device applications, including high conductivity interconnects, double-barrier semimetal-base resonant tunneling transistors, and nanostructures operating in the mesoscopic regime. The structures were synthesized using molecular beam epitaxy, and their structural and electrical transport properties were investigated. In addition to substantially enhanced understanding of this materials combination the project resulted in the demonstration of double barrier Sb/GaSb resonant tunneling structures exhibiting negative differential resistances and Sb submicron loops displaying Aharonov-Bohm oscillations.