Interface Properties of Wide Bandgap Semiconductor Structures

摘要

On GaN films ICP etched at low power did not differ from unetched GaN. Leakagecurrents for the low power and unetched GaN were similar to -10V (less than -1nA). The forward and reverse characteristics for 100 micrometer diameter Pt contacts on GaN etched at high power were similar to those of large (150-200 micrometer diameter) unetched GaN contacts . The barrier heights for these contacts were low and the ideality factors high. Molecular dynamics calculations showed that Si and Ge are effective mass donors, and C is an effective mass