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Electronic Properties of the Interfaces Between the Wide Bandgap Organic Semiconductor para-Sexiphenyl and Samarium

机译:宽带隙有机半导体对-Sexiphenyl与Sa之间界面的电子性质

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摘要

Ultraviolet photoelectron spectroscopy was used to determine the energy level alignment at the interfaces formed by either the deposition of para-sexiphenyl (6P) onto samarium thin films, or by growing samarium on 6P films. We find that for both cases (6P on Sm, and Sm on 6P) the interaction at the interface is weak (physisorption), and the interfacial dipole is smaller than 0.2 eV.
机译:紫外光电子能谱法用于确定对位联苯(6P)沉积在para薄膜上或在6P膜上生长sa形成的界面处的能级对准。我们发现,对于这两种情况(Sm上为6P,6P上为Sm),界面处的相互作用都很弱(物理吸附),并且界面偶极子小于0.2 eV。

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