Reduced Auger Recombination in Mid-Infrared Semiconductor Lasers (POSTPRINT).

摘要

A quantum-design approach to reduce the Auger losses in wavelength=2- micron InGaSb type-I quantum well edge-emitting lasers is reported. Experimentally realized structures show a 3X reduction in the threshold, which results in 4.6X lower Auger current loss at room temperature. This is equivalent to a carrier lifetime improvement of 5.7X and represents about a 19- fold reduction in the equivalent 'Auger coefficient'.