Reduced auger recombination in mid-infrared semiconductor lasers

摘要

A quantum-design approach to reduce the Auger losses in λ = 2 μm InGaSb type-I quantum well edge-emitting lasers is reported. Experimentally realized structures show a ～3 x reduction in the threshold, which results in 4.6 x lower Auger current loss at room temperature. This is equivalent to a carrier lifetime improvement of 5.7 x and represents about a 19-fold reduction in the equivalent "Auger coefficient."