All Ultra-High Vacuum In-Situ Growth Processing Approaches to Realization ofSemiconductor Nanostructure Arrays

摘要

This Final Technical Report summarizes the most important accomplishmentsresulting from the work on semiconductor quantum wire and box synthesis and optical characterization carried out under the above noted grant. These accomplishments included: (1) Creation of GaAs/AlGaAs quantum wires and boxes via purely growth control on appropriately patterned mesas on GaAs(001) and GaAs(111) substrates, (2) Demonstration of their high optical quality, including the first time-resolved cathodoluminescence studies, (3) Demonstration of focused ion beam assisted Cl2 etching of GaAs(001) to create mesa stripes for subsequent size-reducing growth on such mesas for realization of quantum wires, (4) Demonstration of vertically self-organized growth of coherent 3D strained InAs on GaAs island quantum dots, and (5) Demonstration of the first quantum boxes laser based upon such quantum dots.