Multi-Scale Approach to Semiconductor Device Simulation Combining Semi- Classical and Quantum Regions

摘要

A brief summary of research accomplishments during the past three years is given, along with a list of publications that contain the details of this work. Also included is a list of invited presentations of ARO sponsored research. These accomplishments include: development of our Schroedinger Equation Monte Carlo (SEMC) quantum transport simulator into a powerful and efficient tool for bridging the gap from classical to quantum transport; application of our theory of 'quantum capacitance' to explain experimentally observed 'charging' effects in quantum dots, and to provide experimental verification of the theory; development of a method of performing electronic structure calculations via an adaptive wavelet basis; providing new insights into supposedly 'old' issues including p-n junction impedance and, using SEMC, the high-order quantum effect of collision broadening; and initiation of a first principles study of hot-carrier degradation in MOS devices including the hydrogen/deuterium isotope effect.