Multiscale Approach to Device Simulation Combining Semiclassical and Quantum Regions

摘要

Our work was focused on electronic transport, particularly the importance of quantum effects, and on the reliability of semiconductor devices with ultra-submicrometer channel length. We have applied our quantum transport model based on Schroedinger Equation Monte Carlo simulation to the problem of impact ionization. We have shown that collision broadening lowers the threshold of impact ionization. In the area of reliability, we have suggested and simulated a new method to avoid latent failures of ultra-submicrometer CMOS devices.