Ultralow Threshold Semiconductor Lasers Based on Gain without Inversion.

摘要

Quantum interference effects in semiconductors for use in the active regions of low threshold lasers. Quantum interference lies behind electromagnetic induced transparencies and gain without inversion in three level systems. Achieving this behavior in reduced dimensionality semiconductor quantum systems opens a host of potential applications and devices. Experiments in atomic systems and modeling of semiconductors has established the conditions and configurations necessary for these phenomena. The initial portion of our proposed work expands our theory and modeling and performs experimental investigation of the optical properties of various quantum interference configurations. We plan to add time dependence and many-body effects to our theory and plan to investigate optical and intrinsic coupling configurations experimentally. For low threshold lasing, we will investigate the possibility of excitonic lasing without inversion in semiconductor quantum wells based on the AlGaInAs materials system. Both interband and intraband lasers will be investigated.