Defect Characterisation of Ultra-Small Devices

摘要

The work described here details the development of electron magnetic resonance facilities and measurements for use on US Army projects for the characterisation of electronic devices. An operational electrically-detected magnetic resonance (EDMR) spectrometer constructed has been installed based on a Bruker (Bmax = 2.1 T) electromagnet. The first spectra from device structures have been successfully recorded. A flexible modular spectrometer system has resulted and has led to further work to develop the instrumentation. Initial measurements on commercial silicon n+p diodes are consistent with previous studies. Evidence that the origin of the EDMR signal is due to platinum is assessed with the aid of spectral simulation. Electron paramagnetic resonance spectra were simulated by exact diagonalisation of the appropriate spin- Hamiltonians. No completely satisfactory correspondence between reported EPR spectra and the measured and reported EDMR spectra was found. The long- term aim of the work is to study localisation in quantum confined structures and to investigate electrically detected magnetic resonance for impurity and defect detection in operational device structures. Further, the possibility that the technique will give key insights into spin processes in semiconductors of direct relevance to the implementation of quantum computing devices will also be explored.