Investigation of the Electronic and Structural Properties of Oxidized- A1As/GaAs Interfaces

摘要

Research involving devices incorporating oxides formed by the wet oxidation of Al(Ga)As and AlAs0.56Sb0.44 has been performed. Previous results from research on GaAs-On-Insulator (GOI) MESFETs suggested a correlation between channel electronic characteristics, oxidation, and buffer layer. In our research it was found that devices with high aluminum composition LT AlGaAs buffers maintained better channel characteristics after oxidation. In addition to MESFETs, preliminary work into high-speed HBTs was also performed. Base- collector with partially oxidized collectors were found to have a lower capacitance than their unoxidized counterparts. Using a simple capacitive network the reduction in junction capacitance was modeled. Preliminary work was also performed in the InP lattice-matched material system to determine the viability of oxides produced from AlAs0.56Sb0.44.