Some Novel In Situ Studies of Strained Semiconductor Epitaxy on Patterned/Compliant Substrates

摘要

This final technical report summarizes the most important findings of the research work on (a) growth and properties of highly lattice mismatched InAs on GaAs(001) planar and patterned substrates and (b) growth of lattice matched GaAs/A/GaAs and of low lattice mismatch InGaAs/A/GaAs on patterned GaAs for, respectively, the creation of nanostructures and reduction of misfit dislocations. The specific accomplishments include the demonstration of (1) the quantum box nature of the 3D epitaxial InAs islands via photoluminescence excitation spectroscopy, (2) vertically self organized growth of the island quantum dots, (3) control on island quantum dot size, density, and shape, (4) spatially selective growth of quantum wires and boxes via size-reducing growth on mesas, (5) reduction of misfit dislocation in films on submicron and nanometer scale mesas, and (6) the nature of atomic level stress in strained Ge islands on planar Si(001) and in Ge overlayers on Si(001) mesas as obtained from multimillion atom classical molecular dynamics.