Dielectric Properties of Ordered and Disordered Particulates in Semiconductor Matrices

摘要

We have demonstrated a very unique application of LTG-GaAs for nanometer scale ohmic contacts to GaAs. We coat an LTG-GaAs layer with a self- assembled monolayer of xylyl diol, which serves as a metal/semiconductor interface layer. The xylyl diol molecules are 1.8 nm long and have a thiol group at each end to provide chemical bonding to the GaAs and to the gold clusters. The IV data of the contact shows good ohmic behavior with repeatability between various clusters distributed across the surface, We have achieved a specific contact resistivity of 1x10 (exp-6) ohm sq cm. Current densities above 1x10(exp 6) A/sq cm have also been observed.