Band Structure Engineering of the Carrier-Induced Refractive Index in High-Power Midwave-Infrared Laser Diodes

摘要

This program was aimed at developing the understanding of advanced type-II antimonides heterostructures required to realize high-power, room- temperature, diode lasers. The program incorporated elements of theory, semiconductor growth by molecular beam epitaxy, ultrafast and continuous-wave optical characterization, and device processing, fabrication, and testing. Accomplishments include: (1) development of a highly-accurate 14-band k-dot-p band structure model and its application to calculations of Auger and radioactive recombination, gain and index spectra, and carrier transport, and to mid-infrared laser design, (2) measurements of Auger recombination, carrier transport, and gain and refractive index spectra in mid-infrared laser structures, (3) development of figures of merit for designing mid-infrared lasers, (4) design, growth, and characterization of optimized multiconstituent antimonides quantum wells for 3.5 micron lasers, and (5) the theoretical and experimental demonstration of superior Auger suppression in this structure.