Carrier-induced refractive-index change, mode gain and spontaneous-emission factor in AlGaInP SQW-SCH laser diodes

摘要

The carrier-induced refractive-index change, mode gain and spontaneous emission factor are evaluated for AlGaInP single-quantum-well laser diodes with separate-confinement heterostructures. The results are compared with those of AlGaInP double-heterostructure lasers. The values of the alpha parameters, defined as the ratio of the real part of the refractive index to the imaginary part of the refractive index, are estimated as 4.9 and 12.8.