Wide-bandgap III-Nitride based Second Harmonic Generation.

摘要

It was demonstrated that GaN, AlGaN and AlN lateral polar structures can be manufactured that are promising for second harmonic generation using quasi phase matching. In GaN LPS the growth rate of the polar domains significantly depends on the applied Ga supersaturation. AlN LPS can be manufactured easily with no growth rate difference between polar domains. In AlGaN LPS, it could be observed that high Ga composition in the AlxGa1-xN LPS leads to a height difference of the domains towards the III-polarity. It has been suggested that this is strongly influenced by the Ga supersaturation, as observed in GaN LPS. Nevertheless, the fabricated AlxGa1-xN LPSs are promising to be used for QPM waveguides as an alternative to achieve deep UV light-emitters. GaN and AlN waveguides can be used to realize modal-dispersion phase matching enabling SHG.