Ceramic Coatings on Metals Using Atomic Layer Controlled Chemical Vapor Deposition (ASSERT-96)

摘要

The ASSERT research projects that have focused on thin film growth on various substrates examined the adsorption and desorption kinetics of tetrakis and dimethylamine on TiN surfaces. The competition between TDMAYT and DMA for surface sites during TiN growth with TDMAT is a model system to understand reaction product inhibition that affects the conformal deposition of TiN. Studied the adsorption and decomposition of 1,4-disilabutane (DSB) and porous silicon surfaces. DSB is a possible new precursor for SiO2, SiC and Si growth. Explored atomic layer controlled chemical vapor deposition methods to deposit oxide and nitride thin films. Most of this work concentrated on Si3N4 deposition and the catalytic deposition of SiO2 at room temperature using ellipsometry techniques to monitor the film growth. Evaluated the conformality and surface roughness of Si3N4 and SiO2 films deposited with atomic layer controlled growth methods using atomic force microscopy (AFM) techniques. Studies the surface chemistry occurring during the chemical vapor deposition (CVD) of ZrO2 using tetra-tert-butoxy-zirconium (ZTB) as the molecular precursor. Examined ZrO2 films deposited using ZTB as the molecular precursor using AFM and Auger electron spectroscopy depth profiling. Utilized SiO2, TiO2 and Al2O3 atomic layer growth techniques to reduce pore diameters in porous membranes. This controlled reduction in pore size is important for fabricating a molecular sieving membrane for gas sparation applications. Another achievement of the research is the education of students. Several students were funded with the support through the ASSERT program. A former graduate student who continued to work as a post-doctoral fellow in the research group, also contributed to this ASSERT effort.