Surface Reaction Kinetics of Ga(1-x)In(x)P Growth During Pulsed Chemical Beam Epitaxy

摘要

The understanding of thin film growth processes and their control requires the development of surface-sensitive real-time optical characterization techniques that are able to provide insight into the surface reaction kinetics during an organometallic deposition process. These insights will allow us to move the control point closer to the point where the growth occurs, which in a chemical been epitaxy process is a surface reaction layer (SRL), built up of physisorbed and chemisorbed precursor fragments between the ambient and film interface. This contribution presents results on parameter estimations of rate constants and optical response factors in a reduced order surface kinetics (ROSK) model, which has been developed to describe the decomposition and growth kinetics of the involved organometallic precursors and their incorporation in the film deposition.