Kinetics of surface processes arising in hydride pyrolysis and the problem of alloy intermixing near interfaces in Si(Ge)/Si/sub 1-x/Ge/sub x/ structures grown by gas source molecular beam epitaxy

摘要

The key reasons behind spreading of a solid solution near the interfaces of a Si layer in Si/Si/sub 1-x/Ge/sub x/ heterostructures grown by the gas source molecular beam epitaxy are considered. The growth kinetics is studied and the efficiency of the Ge atoms spreading near the interfaces of layers is compared for two situations without atomic flows in the reactor and in their presence (the latter being known as the "hot wire" techniques in one of which a sublimating silicon bar is used for an additional heated element). Structures grown in different methods are analysed for the role of various, mechanisms underlying formation of the profile of the interface of a layer. The spreading of the Si transport channel boundaries is estimated.