Surface Morphology of Homoepitaxial GaSb Films Grown on Flat and Vicinal Substrates; Journal article

摘要

We have compared the surface morphology of GaSb homoepitaxial films grown on both flat and 1 deg vicinal miscut towards (1 1 1)A (0 0 1) substrates using atomic force microscopy and scanning tunneling microscopy. Mound formation is observed for GaSb homoepitaxy on the flat substrates over a range of growth temperatures when either Sb2 or Sb4 is used to supply the group V flux. At sufficiently high growth temperatures, which are different depending on whether Sb2 or Sb4 is used, the mounds transform into fairly well-defined pyramids comprised of distinctly stacked layers that are clearly separated by monolayer-height steps.