Symposium K: Silicon Carbide - Materials, Processing, and Devices

摘要

Symposium K is the second in a series of SiC symposia at the MRS Fall Meeting. Since the last meeting in 2000, advances in SiC materials, processing, and device design have resulted in implementation of SiC-based electronic systems and offer great promise in high voltage, high temperature, high frequency applications. Presenters focused on new developments in the basic science of SiC materials as well as rapidly maturing device technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures. Topics of particular interest were in the area of bulk SiC growth (including large-diameter crystals), modeling, characterization, homo- and heteroepitaxial growth (e.g., doping control, morphology development, and carrier lifetimes), advances in ion implantation, improved ohmic and rectifying contacts, surfaces and interfaces, oxidation, and alternative dielectric materials and devices (including high-voltage, high- temperature, high-frequency sensors and system level benefits).