Electronic, Optical and Structural Properties of 6.1 Angstrom III-V semiconductor Heterostructures for High-Performance Mid-Infrared Lasers

摘要

The goal of this program was to develop new insight into the physics of 6.1-angstrom heterostructures through combined experiment and theoretical efforts. Specifically, time-resolved ultrafast optical and scanning-tunneling microscopy (STM) experimental techniques were used to study the electronic, optical, and structural properties.