Fast Detection of High Power Microwave Signals using a Asymmetrically Shaped Semiconductor Structures

摘要

This report results from a contract tasking Semiconductor Physics Institute as follows: The contractor will investigate methods of creating a fast detector of high power microwave radiation that can measure the amplitude of the pulses of nanoseconds duration in the order of 100 kW. The contractor's investigation will include: 1. Detection properties of asymmetrically shaped semiconductor structure, fabricated on the base of silicon single crystal; 2. Suitability of the device to detect high power microwave signals using asymmetrically shaped AlGaAs structures. The contractor will deliver 12 asymmetrically shaped sensors to: Dr John Gaudet, AFRL/DE, Bldg 909, 3550 Aberdeen Ave SE, Kirtland AFB NM 87117-5776.