Laterally Coupled Buried Heterostructure High-Q Ring Resonators

摘要

All-buried InP-InGaAsP ring resonators laterally coupled to bus waveguides are demonstrated. The buried configurations offer a lower built-in refractive index step along the resonator periphery, which affords enhanced optical coupling coefficients between the waveguides and reduced scattering losses caused by the resonator sidewall imperfections. Very low optical intensity attenuations of 0.4 /cm and coupling-limited quality factors of greater than 10(exp 5) are observed from 200- micrometers-radii ring resonators. The measured spectral linewidth is as narrow as 0.0145 nm.