Novel Temperature Measurement Approach for a High Pressure Dielectric Barrier Discharge Using Diode Laser Absorption Spectroscopy (Preprint)

摘要

A tunable diode laser absorption spectroscopic technique is used to measure both electronically excited state production efficiency and gas temperature rise in a dielectric barrier discharge in argon. The effect of voltage pulse rise time on the power deposition and electronically excited state production efficiency have been measured over a operating pressure range from 100 Torr up to 500 Torr.