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Absolute and relative density measurements in a N_2/Ar dielectric barrier discharge by diode-laser absorption spectroscopy and resolved plasma emission

机译:二极管激光吸收光谱法和分辨等离子体发射法在N_2 / Ar介质阻挡放电中的绝对和相对密度测量

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摘要

The population density of metastable Ar 4s′[1/2]° in a 70% Ar/30% N_2, short-pulsed ( < 15-ns full width at half maximum) dielectric barrier discharge was determined from the time-resolved diode-laser absorption as a function of pulse repetition rate for a gas pressure of 100 Torr. The relative population density change of N_2~+ B~2∑_u~+ and N_2 C~ 3Π_u was also determined from N_2~+ first negative and N_2 second positive plasma emission for the same pulse repetition rates and pressure. The net power deposited per pulse was obtained from measurements of the voltage and current wave forms. The fractional energy dissipated in metastable Ar production was estimated from the power and absorption number density measurements to be roughly 20% for pulse repetition rates ≤ 10 kHz, decreasing to ~10% at 30 kHz for 3.5-kV applied voltage and 100 Torr.
机译:根据时间分辨的二极管,确定了在70%Ar / 30%N_2,短脉冲(半宽度小于15ns的全宽度)介电势垒放电中,亚稳态Ar 4s'1 / 2°的人口密度。气压为100托时,激光吸收与脉冲重复率的关系。在相同的脉冲重复频率和压力下,由N_2〜+第一负等离子体发射和N_2第二正等离子体发射也确定了N_2〜+ B〜2∑_u〜+和N_2 C〜3Π_u的相对种群密度变化。每个脉冲沉积的净功率是通过测量电压和电流波形获得的。根据功率和吸收数密度测量值,当脉冲重复频率≤10 kHz时,耗散在亚稳Ar中的分数能量约为20%,而对于3.5kV的施加电压和100 Torr,在30 kHz时降低至〜10%。

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