GHz Modulation of GaAs-Based Bipolar Cascade VCSELs (Preprint)

摘要

The high-frequency modulation characteristics of GaAs-based bipolar cascade vertical cavity surface emitting lasers operating at 980 nm with GaAs tunnel junctions and p-doped Al0.98Ga0.02As oxide apertures have been measured. We achieve -3 dB laser output modulations of 6.5 GHz for 2-stage and 9.4 GHz for 3-stage devices in response to small-signal current injection at an operating temperature of -50 degrees/C.