Gigahertz modulation of GaAs-based bipolar cascade vertical cavity surface-emitting lasers

摘要

The high-frequency modulation characteristics of GaAs-based bipolar cascade vertical cavity surface-emitting lasers operating at 980 nm with GaAs tunnel junctions and p-doped Al_(0.98)Ga_(0.02)As oxide apertures have been measured. We achieve -3 dB laser output modulations of 6.5 GHz for two-stage and 9.4 GHz for three-stage devices in response to small-signal current injection at an operating temperature of -50 deg C.