Gate-Controlled Ferromagnetism in Semiconductor Nanostructures.

摘要

This project focused on the fabrication, study and understanding of electronic devices that incorporate nanometer scale magnetic elements. Developments in this area have great potential for ultra-fast, high density, compact, non-volatile and radiation hard magnetic memory, which eliminates moving parts from computers and other portable electronic devices while greatly reducing power consumption. The specific aim of this project period was to investigate the effect of spin-polarized currents on magnetization dynamics in device structures with sub 100mm lateral dimensions and systematically varied composition.