Nanocrystallite Si based Metal-Semiconductor-Metal Photosensors and Solar Energy Transformers with Enhanced Responsivity at UV-blue Wavelengths

摘要

Structural damage enhanced near-infrared electroluminescence (EL) of a metal-oxide-semiconductor light emitting diode (MOSLED) made on SiOx film with buried nanocrystallite Si after CO2 laser rapid-thermal-annealing (RTA) at an optimized intensity of 6 kW/cm2 for 1 ms is demonstrated. CO2 laser RTA induced oxygen-related defects are capable of improving Fowler-Nordheim tunneling mechanism of carriers at metal/SiOx interface. The CO2 laser RTA SiOx film reduces Fowler-Nordheim tunneling threshold to 1.8 MV/cm, facilitating an enhanced EL power of an ITO/ SiOx/p-Si/Al MOSLED up to 50 nW at a current density of 2.3 mA/cm2.