Ionizing and Non-ionizing Radiation Effects in Thin Layer Hexagonal Boron Nitride.

摘要

The radiation response of 14nm h-BN/Si metal insulator semiconductor (MIS) devices was investigated using current-voltage and capacitance-voltage measurements indicating Frenkel Poole (FP) and Fowler-Nordheim tunneling (FNT) are the primary current mechanisms before and after irradiation. The data were fit to a composite model of FP and FNT currents. Irradiations to 33.1, 99.3, and 331 krad(Si) from a cobalt-60 source causes a negative voltage shift to the current-voltage measurements of -0.14, -0.45, and -0.46 V respectively. The negative shift indicates radiation induced production of positive space charge at the h-BN/Si interface. No device characteristic changes were observed following gamma irradiation. Fitting the model to data collected after neutron irradiation at affluence of 3.76x1015 n/cm2 indicated no change in the barrier potential for the linear FNT model and a 0.013 eV increase in the barrier potential for the FP model. There was a decrease of 0.19 eV in the tunneling potential for the non-linear FNT model. Defects generated by the neutron damage increased currents by increasing trap assisted tunneling (TAT).