3-5 Micrometers Room Temperature Operated CW Laser Diodes Based on Novel InGaAsNSb Material System

摘要

Novel mid-IR photonic device technology has been developed. High power room temperature operated diode lasers for spectral region above 3 micrometer have been designed and fabricated. 120mW CW output power level was obtained at 3 micrometer and 80 mw CW at 3.1 micrometer at room temperature. More than 200mW CW output was obtained near 3 micrometer at temperatures accessible with thermo-electric cooling. We demonstrate a double-quantum-well GaSb-based diode laser operating at 2.3-2.4 micrometer with a room- temperature CW output power above 1W and a maximum power-conversion efficiency of 17.5%. Insufficient hole confinement in GaSb-based photonic nanostructures reported prior to this project work was identified by set of specially designed experimental studies and by theoretical modeling. We have developed novel design approach based on combination of strain engineered active region and quinternary barrier material to fabricate watt class efficient diode lasers for spectral region from 3 to 3.5 micrometer. These new devices will substitute bulky optically pumped solid-state light emitters with poor power conversion efficiency or cryogenically cooled semiconductor lasers in several important home security application.