Investigation of DC-DC Converter Power Density Using Si and SiC MOSFETS

摘要

This research focuses on a kW-level active-b ridge DC-D C converter. Using two hardware prototypes, the study contraste the per formance of the i nverter-b1 idge section of the converter using either sta te-of-the-art Si licon (Si) or Silicon Carbide (SiC) MOSFET s. Innovations in SiC MOSFET technology have facilitated reductions in steady-state switch losses and operation at higher device temper.