Results of Bare Die Probing for RF Booster Chip at 450, 915, and 2400 MHz

摘要

Low-power radio frequency (RF) transceivers have been used for low- cost, high volume commercial applications that do not always meet the needs of critical Army systems. In low-power applications, a tradeoff between transmit range and battery life exists. A simple means of extending transmit range would be to add a custom integrated circuit (IC) between the transceiver and antenna. Using appropriate technologies, a tradeoff in size, efficiency, and performance is achievable. We present a custom design using gallium arsenide (GaAs) technology to provide enhanced performance. This design optimizes the output power, noise figure, power added efficiency, insertion loss, and range performance of an overall low-power RF system.