Radiation Effects in 3D Integrated SOl SRAM Circuits.

摘要

Radiation effects are presented for the first time for vertically integrated 3x64-kb SOl SRAM circuits fabricated using Lincoln 3DIC technology. Three fully-fabricated 2D circuit wafers are stacked using standard CMOS fabrication techniques including thin-film planarization, layer alignment and oxide bonding. Micronscale dense 3D vias are fabricated to interconnect circuits between tiers. lonizing dose and single event effects are discussed for proton irradiation with energies between 4.8 and 500 MeV. Results are compared with 14-MeV neutron irradiation. Single event upset cross-section, tier-to-tier and angular effects are discussed. The interaction of 500-MeV protons with tungsten interconnects is investigated using Monte-Carlo simulations. Results show no tier to tier effects and comparable radiation effects on 2D and 3D SRAM. 3DIC technology is a potential candidate for fabricating circuits for space applications.