High-Electron Mobility Graphene Channel Transistors for Millimeter-Wave Applications.

摘要

SiCN deposited by plasma-enhanced chemical vapor deposition (PECVD) using hexamethyldisilazane (HMDS) vapor is studied. During PECVD, hydrogen is used as a carrier gas in addition to HMDS vapor. This becomes an advantage in the graphene process because hydrogen has cleaning effect on graphene surface. To verify this effect, SiCN gate stack is applied to the graphene FETs on SiC substrates. FETs with SiCN gate stack exhibit clearer ambipolar characteristics than FETs with conventional SiN gate stack.