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机译:基于外延横向过度的Ridge-Channel AlGaN / GaN常关高电子迁移率晶体管
Chinese Acad Sci Beijing Engn Res Ctr Third Generat Semicond Mat & Inst Semicond State Key Lab Solid State Lighting Beijing Peoples R China;
Chinese Acad Sci Beijing Engn Res Ctr Third Generat Semicond Mat & Inst Semicond State Key Lab Solid State Lighting Beijing Peoples R China;
Chinese Acad Sci Beijing Engn Res Ctr Third Generat Semicond Mat & Inst Semicond State Key Lab Solid State Lighting Beijing Peoples R China;
Peking Univ Inst Microelect Beijing Peoples R China;
Chinese Acad Sci Beijing Engn Res Ctr Third Generat Semicond Mat & Inst Semicond State Key Lab Solid State Lighting Beijing Peoples R China;
Chinese Acad Sci Inst Semicond Engn Res Ctr Semicond Integrated Technol Beijing Peoples R China;
Chinese Acad Sci Beijing Engn Res Ctr Third Generat Semicond Mat & Inst Semicond State Key Lab Solid State Lighting Beijing Peoples R China;
Chinese Acad Sci Beijing Engn Res Ctr Third Generat Semicond Mat & Inst Semicond State Key Lab Solid State Lighting Beijing Peoples R China;
GaN; HEMT; normally-off; ridge-channel; epitaxial lateral overgrowth;
机译:通过溅射和后退火技术实现具有p-NiOx覆盖层的常关AlGaN / GaN高电子迁移率晶体管
机译:通过等离子氧化和Al2O3原子层沉积过度生长来调节AlN / AlGaN / GaN高电子迁移率晶体管的阈值电压
机译:GaN基金属氧化物半导体高电子迁移率晶体管的阈值电压向常关操作的控制
机译:性能改进的常关型AlGaN / GaN高电子迁移率晶体管,在凹入的栅极下方具有设计的p-GaN区域
机译:常压高电子迁移率晶体管的设计,仿真和制造,具有温度稳定性研究
机译:钝化AlGaN / GaN高电子移动晶体管的大信号线性和高频噪声
机译:钝化AlGaN / GaN高电子移动晶体管的大信号线性和高频噪声
机译:m面alGaN / GaN和alInN / GaN异质结构的外延生长适用于常驻型GaN基板上的常关模式高功率场效应晶体管