Probing and Manipulation of Coherent States in Ferromagnetic Narrow Gap Semiconductors with an Eye Towards Developing Concepts for New Device Functionalities

摘要

The goal of this project has been to study coherent phenomena in narrow gap semiconductors (NGSs) including III-V ferromagnetic structures, such as InMnAs and InMnSb, with an emphasis on dynamical aspects, such as charge and spin dynamics. In light of the growing interest in spin-related phenomena and devices, there is now renewed interest in the science and engineering of NGSs and our results are important for understanding the electronic and magnetic states in these material systems. Narrow gap semiconductors have significant potentials for applications in infrared spin photonics and in spin transport devices due to small energy gap, and much higher carrier mobility than in other III Mn V semiconductors.