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Taguchi Analysis on the Effect of Process Parameters on Densification During Spark Plasma Sintering of HfB2-20SiC (Preprint)

机译:HfB2-20siC(预印)放电等离子烧结过程参数对致密化影响的田口分析

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Field assisted sintering (FAST) has emerged as a useful technique to densify ultra high temperature ceramics like HfB2-20SiC to a high density at relatively low temperatures and shorter times. The effect of various process variables on the densification during spark plasma sintering of HfB2-20SiC was studied using Taguchi analysis. The statistical analysis identified sintering temperature as the most significant parameter affecting the densification of HfB2-20SiC material. A density of 99% was achieved on sintering at 2100 deg C for 8 minutes at 30 kN pressure and heating rate of 100 K/min.

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