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Taguchi analysis on the effect of process parameters on densification during spark plasma sintering of HfB_2-20SiC

机译:Taguchi分析工艺参数对HfB_2-20SiC放电等离子烧结过程中致密化的影响

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摘要

Field assisted sintering (FAST) has emerged as a useful technique to density ultra high temperature ceramics like HfB_2-20SiC to a high density at relatively low temperatures and shorter times. The effect of various process variables on the densification during spark plasma sintering of HfB_2-20SiC was studied using Taguchi analysis. The statistical analysis identified sintering temperature as the most significant parameter affecting the densification of HfB_2-20SiC material. A density of 99% was achieved on sintering at 2373 K for 8 min at 30 kN pressure and heating rate of 100 K/min.
机译:场辅助烧结(FAST)已经成为一种有用的技术,可以在相对较低的温度和较短的时间内将HfB_2-20SiC之类的超高温陶瓷致密化为高密度。利用Taguchi分析研究了各种工艺变量对HfB_2-20SiC火花等离子体烧结过程中致密化的影响。统计分析表明,烧结温度是影响HfB_2-20SiC材料致密化的最重要参数。在30kN的压力和100 K / min的加热速率下于2373 K烧结8分钟时,密度达到99%。

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