MANUFACTURING METHODS FOR INDIUM ANTIMONIDE INFRARED DETECTORS

摘要

Methods of manufacturing photovoltaic indium antimonide infrared detectors with directivities within a factor of two of the theoretical limit been developed. Detectors fabricated by these methods have demonstrated good electrical characteristics, thermal stability, and mechanical rugg©dness0nStudies of junction formation techniques proved diffused junctions superior to alloyed junctions. Four diffusants mere tried and cadmium was found to be beat, considering the combination of conversion efficiency, responsivity, uniformity, and stability. The -depth of diffused junctions was found to be too great for maximum sensitivity consequently a controlled surface etch was developed to obtain optimum junction depth.nOf the sensitive area delineation techniques tried, mechanical masking proved best for this program. For higher production rates or more cosmos shapes, evaporation irking is recommended.nA glass-metal-sapphire Dewar was designed for the detector package0 It. mat the vibration requirements of MIL-E-5400 and the temperature requirements of KH~E-202. Glass encapsulated platinum leads integral with the package were used to eliminate lead generated microphonics.