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Solid State Microwave and Power Devices. Volume 1. Integrated Amplifier

机译：固态微波和功率器件。第1卷。集成放大器

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摘要

A study was made of solid-state amplifiers that utilize the negative resistance of tunnel diodes, as an amplifying mechanism, in combination with the non-reciprocity of the Hall-effect. This was achieved by connecting tunnel diodes across either the input or the output of a Hall isolator.

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Kroemer, H.;
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年度 1964
页码 p.1-2
总页数 2
原文格式 PDF
正文语种 eng
中图分类
关键词
MICROWAVE EQUIPMENT ; MICROWAVE AMPLIFIERS ; SEMICONDUCTOR DEVICES ; SOLID STATE PHYSICS ; TUNNEL DIODES ; HALL EFFECT ; NEGATIVE RESISTANCE CIRCUITS ; IMPEDANCE MATCHING ; PUSH-PULL AMPLIFIERS ; SWITCHING CIRCUITS ; GAIN ; EPITAXIAL GROWTH ; INDIUM ALLOYS ; ANTIMONY ALLOYS ; ARSENIC ALLOYS ; VACUUM APPARATUS ; VAPOR PLOTING ; OSCILLATORS ; TEMPERATURE ; FREQUENCY ; INTEGRATED CIRCUITS;

机译：微波设备;微波放大器;半导体器件;固态物理;隧道二极管;霍尔效应;负电路;阻抗匹配;推拉放大器;开关电路;增益;外延生长;铟合金;锑合金;砷合金;真空设备;蒸汽绘图;振荡器;温度;频率;集成电路;

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1. Integrated Inverse Class-F Silicon Power Amplifiers for High Power Efficiency at Microwave and mm-Wave [J] . Seyed Yahya Mortazavi, Kwang-Jin Koh IEEE Journal of Solid-State Circuits . 2016,第10期

机译：集成反向F类硅功率放大器，可在微波和毫米波时实现高功率效率
2. Development of Onboard High Linearity Low Noise Amplifier and Solid State Power Amplifier for Satellite/Terrestrial Integrated Mobile Communication System [J] . Yoshiyuki FUJINO, Amane MIURA Journal of the National Institute of Information and Communications Technology . 2015,第1期

机译：卫星/地面集成移动通信系统的机载高线性度低噪声放大器和固态功率放大器的开发
3. Design Procedure for Integrated Microwave GaAs Stacked-FET High-Power Amplifiers [J] . Gijs van der Bent, Peter de Hek, Frank E. van Vliet IEEE Transactions on Microwave Theory and Techniques . 2019,第9期

机译：集成微波GaAs堆叠式FET大功率放大器的设计程序
4. Novel GaN Based Solid State Power Amplifiers, Results, Advances and Comparison with Vacuum Tubes Based Microwave Power Modules [C] . Marco Li Vecchi, Francesco Di Maggio, Antonio Spatola, IEEE International Forum on Research and Technology for Society and Industry . 2018

机译：新型基于GaN的固态功率放大器，与基于真空管的微波功率模块的结果，改进和比较
5. Linearization techniques for integrated CMOS power amplifiers and a high efficiency class-F gallium nitride power amplifier. [D] . Ko, Sangwon. 2007

机译：集成CMOS功率放大器和高效F类氮化镓功率放大器的线性化技术。
6. Towards coherent combining of X-band high power microwaves: phase-locked long pulse radiations by a relativistic triaxial klystron amplifier [O] . Jinchuan Ju, Jun Zhang, Zumin Qi, -1

机译：致力于X波段大功率微波的相干组合：相对论三轴速调管放大器的锁相长脉冲辐射
7. Generation of plasma torch by 2.45 GHz microwaves from a solid-state power amplifier [O] . Dong H. Shin, Se M. Chun, Yong C. Hong, 2019

机译：从固态功率放大器产生2.45 GHz微波的等离子体炬产生
8. Solid State Microwave and Power Devices. Volume 2. Magnesium Germanide [R] . Kroemer, H., Day, G. F., Fairman, R. D., 1964

机译：固态微波和功率器件。第2卷。镁锗化物

Solid State Microwave and Power Devices. Volume 1. Integrated Amplifier

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