Optoelectronic Functional Electronic Blocks

摘要

This program has been concerned with the application of optoelectronics to broaden the applicability of silicon integrated circuits. Combination of the isolation feature of optical coupling with existing silicon integrated circuit technology has resulted in a new series of Functional Electronic Blocks (FEB's) which provide functions previously impossible or extremely difficult to attain in solid-state form. Thermal cycling tests on additional epoxy-covered glass-bonded photo-pairs indicate that a reasonable yield of stable pairs with good coupling can be obtained with this approach. Shaped flat sources exhibit better coupling, but the improvement is not as great as expected. Some of the characteristics of oxideisolated silicon detectors are presented. The characteristics of the first group of FEB-compatible guard-ring light sources are described. Additional correlation has been found between quantum efficiency and the dislocation density in the starting material. Diffusion experiments with gallium arsenide have continued. Epitaxial GaAsP is found to have a high dislocation density. Detailed examination of a high efficiency gallium arsenide light source, coupled with additional experimentation, has led to the conclusion that the internal radiative recombination efficiency approaches 100% over the temperature range studied. A summary of life-test experiments with gallium arsenide light sources is presented.